Solid-state image sensing apparatus

ABSTRACT

This invention provides a solid-state image sensing apparatus in which a sensor portion that performs photo-electric conversion and plural layers of wiring lines including a signal line for the sensor portion are formed on a semiconductor substrate; which includes an effective pixel portion configured such that light enters the sensor portion, and an optical black portion shielded so that the light does not enter the sensor portion; and which has a light-receiving surface on the back surface side of the semiconductor substrate. The optical black portion includes the sensor portion, a first light-shielding film formed closer to the back surface side of the semiconductor substrate than the sensor portion, and a second light-shielding film formed closer to the front surface side of the semiconductor substrate than the sensor portion.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 13/255,935,filed Sep. 12, 2011, which is a national stage entry under 37 CFR 371 ofInternational Application No. PCT/JP2010/056276, filed Mar. 31, 2010,the entire disclosures of which are hereby incorporated by reference.

TECHNICAL FIELD

The present invention relates to the structure of a solid-state imagesensing apparatus.

BACKGROUND ART

Japanese Patent Laid-Open No. 2007-305675 discloses a technique forreducing an influence that infrared light exerts on an optical blackportion (to be referred to as an OB portion hereinafter). Also, JapanesePatent Laid-Open No. 2008-016733 discloses a technique for preventingthe adverse effect of light which enters an effective pixel portion fromthe front surface side of a semiconductor substrate in a back surfaceincidence type solid-state image sensing apparatus.

Although infrared light can be shielded by a light-shielding film, it isharder to absorb than visible light and therefore has a penetrationdistance longer than that of visible light. For this reason, infraredlight which obliquely enters the effective pixel portion on thelight-receiving surface is transmitted through the semiconductorsubstrate, is reflected by the surface opposite to the light-receivingsurface, and enters a sensor portion in the OB portion. In this case,photo-electric conversion occurs in the OB portion, so a black level tobe detected in the OB portion under normal circumstances may not becorrectly detected.

Also, to improve the aperture ratio, another back surface incidence typesolid-state image sensing apparatus has been proposed. In thisapparatus, a sensor portion which performs photo-electric conversion andplural layers of wiring lines including a signal line for driving thesensor portion are formed on the front surface side of a semiconductorsubstrate. This apparatus has a light-receiving surface on the backsurface side of the semiconductor substrate. However, this structureposes a problem that infrared light enters the OB portion in relativelylarge amounts although it can improve the aperture ratio.

FIG. 4 is a sectional view showing the schematic arrangement of aconventional back surface incidence type solid-state image sensingelement. A light-shielding film 30 for shielding an OB portion is formedabove a sensor portion 11 and opens to an effective pixel portion 41 ofa pixel within the effective pixel portion 41, as shown in FIG. 4.Infrared light strikes the light-receiving surface of a semiconductorsubstrate 10. Then, it is often the case that infrared light L whichobliquely strikes the semiconductor substrate 10 is transmitted throughthe semiconductor substrate 10, is reflected by the inner surface of aninsulating layer 20 on the side opposite to the light-receiving surface,and enters the sensor portion 11 of a pixel within an OB portion 42, asshown in FIG. 4.

Infrared light is harder to absorb than visible light, but is absorbedalbeit poorly. Especially infrared light with a wavelength of about 800nm to 1,300 nm is absorbed by silicon to some extent. For this reason,when infrared light enters the sensor portion 11 of a pixel within theOB portion 42, it is absorbed by the sensor portion 11 andphoto-electric conversion occurs in the OB portion 42.

As a measure against the above-mentioned phenomenon, it is possible toform an image sensing apparatus such as a camera by placing an IR cutfilter in front of a solid-state image sensing element. Using an IR cutfilter in this way makes it possible to prevent infrared light fromentering not only the OB portion but also the effective pixel portion.However, an IR cut filter capable of cutting light in a wide wavelengthrange is very expensive, so its use raises the cost of the image sensingapparatus. Furthermore, the measure of using an IR cut filter cannot beadopted in, for example, an image sensing apparatus which cannot employan IR cut filter (for example, a monitoring camera which utilizesinfrared light or an image sensing apparatus which enhances theresolution by utilizing infrared light).

SUMMARY OF INVENTION

The present invention has been made in consideration of theabove-mentioned problems, and prevents infrared light from entering anoptical black portion.

According to the present invention, there is provided a solid-stateimage sensing apparatus in which a sensor portion that performsphoto-electric conversion is formed on a semiconductor substrate; whichincludes an effective pixel portion configured such that light entersthe sensor portion, and an optical black portion shielded so that thelight does not enter the sensor portion; and which has a light-receivingsurface on a back surface side of the semiconductor substrate, whereinthe optical black portion comprises the sensor portion, a firstlight-shielding film formed closer to the back surface side of thesemiconductor substrate than the sensor portion, and a secondlight-shielding film formed closer to a front surface side of thesemiconductor substrate than the sensor portion.

Also, according to the present invention, there is provided asolid-state image sensing apparatus in which a sensor portion thatperforms photo-electric conversion is formed on a semiconductorsubstrate; which includes an effective pixel portion configured suchthat light enters the sensor portion, and an optical black portionshielded so that the light does not enter the sensor portion; and whichhas a light-receiving surface on a back surface side of thesemiconductor substrate, wherein the optical black portion comprises thesensor portion, a light-shielding film formed closer to the back surfaceside of the semiconductor substrate than the sensor portion, and plurallayers of wiring lines formed closer to a front surface side of thesemiconductor substrate than the sensor portion, and the plural layersof the wiring lines are formed so as to shield the light which entersthe sensor portion.

Further features of the present invention will become apparent from thefollowing description of exemplary embodiments with reference to theattached drawings.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a sectional view showing the structure of a solid-state imagesensing apparatus according to the first embodiment of the presentinvention;

FIGS. 2A and 2B are sectional views showing the structure of asolid-state image sensing apparatus according to the second embodimentof the present invention;

FIG. 3 is a sectional view showing the structure of a solid-state imagesensing apparatus according to the third embodiment of the presentinvention; and

FIG. 4 is a sectional view showing the structure of a conventionalsolid-state image sensing apparatus.

DESCRIPTION OF EMBODIMENTS

Embodiments of the present invention will be described in detail belowwith reference to the accompanying drawings. Note that the samereference numerals denote the same elements throughout the drawings, anda repetitive description thereof will not be given.

First Embodiment

FIG. 1 is a sectional view showing the structure of a solid-state imagesensing apparatus according to the first embodiment of the presentinvention. A solid-state image sensing apparatus 1 in this embodiment isof the CMOS type. In this embodiment, a semiconductor substrate (siliconsubstrate) 10 includes P-type well regions 12, and sensor portions 11which perform photo-electric conversion are formed in the P-type wellregions 12. The sensor portion 11 is formed from an N-type impuritydiffusion layer (first impurity diffusion layer) and forms a PN-junctiondiode with the semiconductor substrate 10. The sensor portions 11 ofrespective pixels are isolated from each other by an element isolationlayer (not shown) formed from a SiO₂ layer, which is partially buried inthe semiconductor substrate 10. An insulating layer 20 is formed on thefront surface side of the semiconductor substrate 10, i.e., below thesensor portions 11. Plural layers of wiring lines 21 including a signalline for the sensor portion 11 are formed within the insulating layer20.

The solid-state image sensing apparatus 1 is of the back surfaceincidence type and senses an object by photo-electrically converting, bythe sensor portion 11, light which comes from the object upon strikingthe back surface (light-receiving surface) of the semiconductorsubstrate 10. A large number of pixels are formed in the pixel region.The pixel region includes an effective pixel portion 31 and opticalblack (OB) portion 32. The effective pixel portion 31 serves to obtainan image signal by guiding the light to the sensor portion 11 andphoto-electrically converting it. The optical black portion 32 isshielded to prevent the light from entering the sensor portion 11 inorder to obtain the black level standard of the image signal. Althoughnot shown, the effective pixel portion 31 serves as the main part of thepixel region and the optical black portion 32 is formed on the edge ofthe pixel region.

A light-shielding film 30 (first light-shielding film) for shielding theoptical black portion 32 to prevent the light from entering the sensorportion 11 is formed on the back surface side (light-receiving surfaceside) of the semiconductor substrate 10 in the optical black portion 32for detecting a black level. On-chip lenses 50 are formed on thelight-shielding film 30 on the back surface side (light-receivingsurface side) of the semiconductor substrate 10. If the solid-stateimage sensing element in this embodiment is used as a color solid-stateimage sensing element, color filters (not shown) are placed below theon-chip lenses 50. Note that each pixel includes a transistor portionincluding a transistor which is formed in a portion other than thecross-section shown in FIG. 1 and serves to read out a signal chargephoto-electrically converted by the sensor portion 11 and to convert thesignal charge into a voltage and extract it as a signal.

In this embodiment, a light-shielding film 24 (second light-shieldingfilm) is formed within the insulating layer 20 present on the frontsurface side of the semiconductor substrate 10 in the optical blackportion 32. The plural layers of the wiring lines 21 including a signalline for the sensor portion 11 are formed within the insulating layer 20present below the semiconductor substrate 10 (on its front surfaceside). One of the layers of the wiring lines 21 simultaneously serves asthe light-shielding film 24 mentioned above. The light-shielding film 24is made of the same material as that of the wiring lines 21. Examples ofthis material are aluminum (Al), copper (Cu), tungsten (W), and titanium(Ti).

An effect produced by forming a solid-state image sensing apparatus 1 asin this embodiment will be explained next. On the front surface side ofthe solid-state image sensing apparatus 1 in the OB portion, thelight-shielding film 24 as mentioned above is formed within theinsulating layer 20 present on the front surface side of thesemiconductor substrate 10. This makes it possible to prevent infraredlight which comes from the region, where the light-shielding film 30 isabsent, on the back surface side of the semiconductor substrate 10 inthe effective pixel portion from being transmitted through thesemiconductor substrate 10, being reflected by the inner surface, on thefront surface side, of the insulating layer 20 present on the frontsurface side of the semiconductor substrate 10, and entering the sensorportion 11 in the optical black portion 32. This, in turn, makes itpossible to correctly detect a black level in the optical black portion32, thus obtaining a satisfactory sensed image.

In this manner, the light-shielding film 24 is formed only inside theoptical black portion. Hence, infrared reaches the inner surface, on thefront surface side, of the insulating layer 20 below the semiconductorsubstrate 10 without being reflected by the light-shielding film 24 andbecoming stray light. In addition, even when the infrared lightreflected by the inner surface enters the optical black portion 32, itis shielded by the light-shielding film 24 formed within the insulatinglayer 20 including the wiring line layers and is therefore preventedfrom entering the sensor portion 11 in the optical black portion 32. Inthis embodiment, the light-shielding film 24 is formed within theinsulating layer 20 and made of the same material as that of the wiringlines 21. This makes it possible to form the light-shielding film 24 inthe wiring line forming process, thus facilitating the formation of thelight-shielding film 24 and, in turn, the manufacture of the solid-stateimage sensing apparatus 1.

Japanese Patent Laid-Open No. 2007-305675 uses a measure of forming alow reflecting coating at the interface of the semiconductor substrateagainst a problem that infrared light which comes from the apertureregion is reflected by the inner surface at the interface of thesemiconductor substrate and enters the optical black portion. It ispossible to utilize this measure for a back surface incidence typesolid-state image sensing apparatus. Nevertheless, a back surfaceincidence type solid-state image sensing apparatus has a relatively highaperture ratio, so infrared light is prone to enter the optical blackportion with a relatively high intensity in relatively large amounts.The measure of using a low reflecting coating in Japanese PatentLaid-Open No. 2007-305675 cannot perfectly prevent the reflection onlyby reducing the chance of the reflection. Furthermore, because theoptical thickness of the low reflecting coating for suppressing thereflection is constant, a satisfactory effect cannot be obtained forinfrared light in a wide wavelength range.

Also, Japanese Patent Laid-Open No. 2008-016733 proposes a measure offorming a light-shielding film on the front surface side of thesemiconductor substrate to cover the entire light-receiving portion toprevent the adverse effect of light which externally enters the backsurface incidence type solid-state image sensing apparatus. However,with the measure proposed in Japanese Patent Laid-Open No. 2008-016733,a satisfactory effect cannot be obtained for light which comes from thelight-receiving surface side, is transmitted through the semiconductorsubstrate, is reflected by the surface opposite to the light-receivingsurface, and enters the sensor portion although this is a problem to besolved by the present invention. Furthermore, when the light-shieldingfilm is made of the same material as that of the wiring line layers, theabove-mentioned measure may even increase the chance of reflection andcontribute to the entrance of infrared light to the optical blackportion.

Second Embodiment

FIG. 2A is a sectional view showing the structure of a solid-state imagesensing apparatus according to the second embodiment of the presentinvention. In a solid-state image sensing apparatus 2 in thisembodiment, a light-shielding dummy pixel portion 33 is formed at theboundary between an effective pixel portion 31 and an optical blackportion 32. Also, a light-shielding film 24 is formed inside thelight-shielding region on a light-shielding film 30. That is, thelight-shielding region on the light-shielding film 24 is narrower thanthat on the light-shielding film 30, so the light-shielding film 30shields sensor portions 11, and a region which is not shielded by thelight-shielding film 24 is the light-shielding dummy pixel portion 33.Other arrangements and operations of the solid-state image sensingapparatus 2 are the same as the solid-state image sensing apparatus 1.

FIG. 2B is a sectional view illustrating a case in which thelight-shielding film 24 is not formed inside the light-shielding regionon the light-shielding film 30 which forms the optical black portion 32,for the sake of comparison with the arrangement shown in FIG. 2A. In thearrangement shown in FIG. 2B, infrared light which enters the edge ofthe effective pixel portion 31 may be reflected by the surface, on theback surface side (light-receiving surface side), of the light-shieldingfilm 24 without reaching the inner surface, on the front surface side,of an insulating layer 20 below a semiconductor substrate 10 and enterthe sensor portion as stray light, depending on the incident angle ofinfrared light.

Hence, the structure as shown in FIG. 2A can prevent even light whichenters the effective pixel portion 31 at a relatively large incidentangle from directly entering the position between the light-shieldingfilm 30 and the light-shielding film 24 and becoming stray light. Thismakes it possible to reliably shield the optical black portion 32.Although the light-shielding film 24 is formed inside thelight-shielding region on the light-shielding film 30 by a length of onepixel in this embodiment, it may be formed inside the light-shieldingregion by a length of more than one pixel. When, for example, a colorfilter (not shown) represents one set of colors using four, 2×2 pixels(the so-called Bayer array), the light-shielding film 24 may be formedinside the light-shielding region by a length of two pixels for the sakeof convenience of signal processing. Also, in an arrangement which readsout the signals output from the solid-state image sensing apparatus viaa plurality of channels, the light-shielding film 24 may be formedinside the light-shielding region on the light-shielding film 30 by alength of an integer multiple of the number of output channels in orderto equalize signal processing in the OB portion among the outputchannels.

Third Embodiment

FIG. 3 is a sectional view showing the structure of a solid-state imagesensing apparatus according to the third embodiment of the presentinvention. In a solid-state image sensing apparatus 3, plural layers ofwiring lines 21 simultaneously serve as a light-shielding film on thefront surface side of a semiconductor substrate 10 in an optical blackportion 32. Other arrangements and operations of the solid-state imagesensing apparatus 3 are the same as in the solid-state image sensingapparatus 1.

If a light-shielding film is formed from a single wiring line layer, ithas a wiring line shape largely different from that of an effectivepixel portion 31, so differences in wiring line resistance andcapacitance occur between the effective pixel portion 31 and the opticalblack portion 32. For this reason, problems such as difficulty ofcorrectly detecting a black level may be posed due to the difference inelectrical characteristic between the effective pixel portion 31 and theoptical black portion 32. To overcome the problems, in this embodiment,the plural layers of the wiring lines 21 shield a sensor portion 11 inthe optical black portion 32 against infrared reflected light (infraredlight which comes from the effective pixel portion 31 and is reflectedby the front surface of the semiconductor substrate 10). Thisarrangement makes it possible to reduce or eliminate the difference inwiring line shape between the effective pixel portion 31 and the opticalblack portion 32, thereby matching their electrical characteristics. Theuse of the plural layers of the wiring lines 21 also makes it possibleto generate a light-shielding directionality. For example, as for theentrance of light from the effective pixel portion 31 to the frontsurface of the semiconductor substrate 10, the reflection area is setsmall by stacking a plurality of wiring lines in order to reducecomponents expected to become stray light upon being reflected by thewiring line layers. Also, as for the entrance of light from the frontsurface of an insulating layer 20 below the semiconductor substrate 10to the optical black portion 32, an arrangement which shields light bysetting the reflection area large can be adopted.

As has been explained above, according to the above-describedembodiments, it is possible to shield infrared light which is reflectedby the front surface of a semiconductor substrate and enters a sensorportion in an optical portion in a back surface incidence typesolid-state image sensing apparatus. This, in turn, makes it possible tocorrectly determine a black level standard based on characteristicsassociated with the optical black portion. It is also possible tosuppress the occurrence of problems such as coloring of an image todetermine the black level and a change in brightness of the image. This,in turn, makes it possible to form a solid-state image sensing elementwith good image sensing characteristics.

Further, it is possible to reduce the cost of an IR cut filter of theimage sensing apparatus or omit it. Also, a satisfactory image can beobtained by suppressing the occurrence of problems associated withreflected infrared light even in an image sensing apparatus which cannotemploy an IR cut filter. Also, the number of steps never increasesbecause a light-shielding film is formed using wiring line layers in thewiring line forming process.

The present invention is not limited to the above-described embodiments,and can be modified into various forms. For example, an effect ofshielding infrared light from the effective pixel portion can beobtained even by forming the light-shielding film 24 only in thevicinity of the effective pixel portion in the OB portion. Also,although a P-type semiconductor substrate and an N-type light-receivingportion have been exemplified, an N-type semiconductor substrate and aP-type light-receiving portion may be adopted.

While the present invention has been described with reference toexemplary embodiments, it is to be understood that the invention is notlimited to the disclosed exemplary embodiments. The scope of thefollowing claims is to be accorded the broadest interpretation so as toencompass all such modifications and equivalent structures andfunctions.

This application claims the benefit of Japanese Patent Application No.2009-115919, filed May 12, 2009, and which is hereby incorporated byreference herein in its entirety.

1. (canceled)
 2. A solid state image sensing apparatus having asemiconductor substrate on which a plurality of photo-electricconversion portions are arranged, and an insulating layer which isarranged on a front surface of the semiconductor substrate and on whicha plurality of wiring lines including signal lines of the photo-electricconversion portions are arranged, wherein a rear surface of thesemiconductor substrate is set as a light incident surface, said solidstate image sensing apparatus comprising: an effective pixel portionwhere light enters from the light incident surface to the plurality ofphoto-electric conversion portions; and a light shielded pixel portionwhere a first light shielding film is arranged at the light incidentsurface of the semiconductor substrate and a second light shielding filmis arranged in the insulating layer so that light does not enter to theplurality of photo-electric conversion portions.
 3. The apparatusaccording to claim 2, wherein the second light shielding film is formedfrom a material which is the same as a material of the wiring lines. 4.The apparatus according to claim 2, wherein the second light shieldingfilm shields light which enters from said effective pixel portion and isreflected at an inner surface of the insulating layer and travelstowards the photo-electric conversion portions of said light shieldingpixel portion.